?-Ga2O3 double gate junctionless FET with an efficient volume depletion region

نویسندگان

چکیده

This paper presents a new ?-Ga2O3 Junctionless double gate Metal-Oxide-Field-Semiconductor-Effect-Transistor (?DG-JL-FET) with an embedded P+ packet at the oxide layer (PO-?DG-JL-FET) for high-frequency applications. Our goal is to achieve efficient volume depletion region by placing of silicon. We show that proposed structure has subthreshold swing ? 64 mV/decade. It suppressed band-to-band tunneling (BTBT) phenomenon. Also, PO-?DG-JL-FET design high Ion/Ioff 1.3 × 109. The reduces off-current (IOFF) 10?4, while on-current (ION) slightly. Besides, we acceptable Ioff value in range work functions optimize designs terms area, power gain, and leakage current. structure's current 7 10?17 A 400 K temperature. Furthermore, have shown fabrication process steps design.

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ژورنال

عنوان ژورنال: Physics Letters

سال: 2021

ISSN: ['1873-2429', '0375-9601']

DOI: https://doi.org/10.1016/j.physleta.2021.127575